Axion insulator states in a topological insulator proximitized to magnetic insulators: A tight-binding characterization

The recent discovery of axion states in materials such as antiferromagnetic topological insulators has boosted investigations the magnetoelectric response and their promise towards realizing dissipationless electronics. In this paper, we develop a tight-binding methodology to explore emergence ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ proximity magnetic on top bottom surfaces. protection surface is lifted by time-reversal-breaking perturbation due insulator, gap opened surfaces, giving rise half-quantized Hall conductance zero plateau---evidencing an insulator state. We developed real-space Hamiltonian for using first-principles data. Transport properties system were obtained within Landauer-B\"uttiker formalism, discuss creation through plateau at function proximitized magnetization corresponding potentials well thickness insulator.